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Electronic transport for armchair graphene nanoribbons with a potential barrier |
Zhou Ben-Hu(周本胡)a), Duan Zi-Gang(段子刚)b), Zhou Ben-Liang(周本良)a), and Zhou Guang-Hui(周光辉)a)† |
a Department of Physics, Hunan Normal University, Changsha 410081, China; b Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China |
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Abstract This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.
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Received: 07 April 2009
Revised: 02 July 2009
Accepted manuscript online:
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PACS:
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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72.20.Dp
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(General theory, scattering mechanisms)
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Fund: Project supported by National
Natural Science Foundation of China (Grant No.~10974052), and
Specialized Research Fund for the Doctoral Program of Higher
Education of China (Grant No.~20060542002). |
Cite this article:
Zhou Ben-Hu(周本胡), Duan Zi-Gang(段子刚), Zhou Ben-Liang(周本良), and Zhou Guang-Hui(周光辉) Electronic transport for armchair graphene nanoribbons with a potential barrier 2010 Chin. Phys. B 19 037204
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