CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin-dependent transport for a two-dimensional electron gas with magnetic barriers |
Wang Hai-Yan(王海艳)a), Duan Zi-Gang(段子刚)b), Liao Wen-Hu(廖文虎)a), and Zhou Guang-Hui(周光辉) a)† |
a Department of Physics, Hunan Normal University, Changsha 410081, China; b Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China |
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Abstract The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
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Received: 23 May 2009
Revised: 10 September 2009
Accepted manuscript online:
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PACS:
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72.25.Dc
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(Spin polarized transport in semiconductors)
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72.25.Mk
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(Spin transport through interfaces)
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75.60.Ej
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(Magnetization curves, hysteresis, Barkhausen and related effects)
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72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos.~10574042 and 10974052), the
Specialized Research Fund for the Doctoral Program of Higher
Education of China (Grant No.~20060542002). |
Cite this article:
Wang Hai-Yan(王海艳), Duan Zi-Gang(段子刚), Liao Wen-Hu(廖文虎), and Zhou Guang-Hui(周光辉) Spin-dependent transport for a two-dimensional electron gas with magnetic barriers 2010 Chin. Phys. B 19 037301
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