CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Luminescence of Ce3+ in lanthanum silicon oxynitride |
Hu Long(胡龙),Xu Xue-Wen(徐学文),Lu Zun-Ming(卢遵铭),Fan Ying(范英), Li Yang-Xian(李养贤), and Tang Cheng-Chun(唐成春)† |
School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China |
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Abstract The luminescence properties of lanthanum silicon oxynitride (La-Si-O-N) series doped by trivalent Ce ions have been investigated to seek for tunable wavelength-conversion phosphor for white light emitting diode applications. Four compound hosts of LaSiO2N, La4Si2O7N2, La5Si3O12N, and La2Si6O3N8 were synthesized and examined in this work. Crystallographic examination for the equal amount of Ce3+ substitution indicated that the covalency degree decreased in a sequence LaSiO2N > La2Si6O3N8 > La4Si2O7N2 > La5Si3O12N, not simply in correlation to the ratio of N3/O2. Excitation and emission spectrum measurements showed the main features of Ce3+ luminescence in the series: the centre of gravity of 5d bands depends on crystal-field splitting more strongly than that on covalency of Ce–N bonding; nephelauxetic effect could not be observed clearly for the investigated series; to some extent Stokes shift was dominated by crystal-field splitting rather than Ce–N covalency degree.
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Received: 20 September 2010
Revised: 23 September 2010
Accepted manuscript online:
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PACS:
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61.72.S-
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(Impurities in crystals)
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71.70.Ch
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(Crystal and ligand fields)
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78.55.Hx
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(Other solid inorganic materials)
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81.05.-t
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(Specific materials: fabrication, treatment, testing, and analysis)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974041) and the Natural Science Foundation of Hebei Province of China (Grant No. E2010000084). |
Cite this article:
Hu Long(胡龙),Xu Xue-Wen(徐学文),Lu Zun-Ming(卢遵铭),Fan Ying(范英), Li Yang-Xian(李养贤), and Tang Cheng-Chun(唐成春) Luminescence of Ce3+ in lanthanum silicon oxynitride 2010 Chin. Phys. B 19 127807
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