Abstract The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700--950 ℃. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 ℃ to 900 ℃ are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.
Received: 25 December 2008
Revised: 05 March 2009
Accepted manuscript online:
PACS:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
(Structure of clean surfaces (and surface reconstruction))
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60576044).
Cite this article:
Zhu Feng(朱峰), Chen Zhi-Ming(陈治明), Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛) SiC based Si/SiC heterojunction and its rectifying characteristics 2009 Chin. Phys. B 18 4966
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