Abstract Polycrystalline CuGaSe$_{2}$ thin films on Mo-coated soda-lime glass substrates have been synthesized by co-evaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe$_{2}$ films strongly depend on the film composition. Stoichiometric CuGaSe$_{2}$ is fabricated, as indicated by x-ray diffraction spectroscope (XRD) and x-ray fluorescence (XRF). A two-phase region is composed of CuGaSe$_{2}$ and Cu$_{2 - x}$Se phases for Cu-rich films, and CuGaSe$_{2}$ and CuGa$_{3}$Se$_{5}$ phases for Ga-rich films，respectively. Morphological properties are detected by scanning electron microscope (SEM) for various compositional films, the grain sizes of the CuGaSe$_{2 }$films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe$_{2}$ films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe$_{2}$ films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe$_{2}$ thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass (AM)1.5 spectrum for 100 mW/cm$^{2 }$ at room temperature (aperture area, 0.24 cm$^{2})$. The open circuit voltage of the CuGaSe$_{2}$ solar cells is close to770 mV.
Received: 18 February 2008
Revised: 26 February 2008
Accepted manuscript online:
Fund: Project supported by the National
High Technology Joint Research Program of China
(Grant No 2004AA513020).
Cite this article:
Zhang Li(张力), He Qing(何青), Xu Chuan-Ming(徐传明), Xue Yu-Ming (薛玉明), Li Chang-Jian(李长健), and Sun Yun(孙云) The effect of composition on structural and electronic properties in polycrystalline CuGaSe2 thin film 2008 Chin. Phys. B 17 3138
Epitaxial synthesis and electronic properties of monolayer Pd2Se3 Peng Fan(范朋), Rui-Zi Zhang(张瑞梓), Jing Qi(戚竞), En Li(李恩), Guo-Jian Qian(钱国健), Hui Chen(陈辉), Dong-Fei Wang(王东飞), Qi Zheng(郑琦), Qin Wang(汪琴), Xiao Lin(林晓), Yu-Yang Zhang(张余洋), Shixuan Du(杜世萱), Hofer W A, Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2020, 29(9): 098102.
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