Epitaxial synthesis and electronic properties of monolayer Pd2Se3

doi:10.1088/1674-1056/abab80

Abstract

Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd₂Se₃ is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd₂Se₃ is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd₂Se₃ on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd₂Se₃ was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd₂Se₃ can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd₂Se₃ provide a promising platform for future investigations and applications.

Keywords: 2D material Pd₂Se₃ scanning tunneling microscope/spectroscopy non-contact atomic force microscope

Received: 21 May 2020
Revised: 15 July 2020
Accepted manuscript online: 01 August 2020

PACS:	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	68.55.-a	(Thin film structure and morphology)
	71.22.+i	(Electronic structure of liquid metals and semiconductors and their Alloys)
	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0202300, 2018YFA0305800, and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 51922011, 51872284, and 61888102), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the Science Fund from University of the Chinese Academy of Sciences.

Corresponding Authors: Shixuan Du, Hong-Jun Gao
E-mail: sxdu@iphy.ac.cn;hjgao@iphy.ac.cn

Cite this article:

Peng Fan(范朋), Rui-Zi Zhang(张瑞梓), Jing Qi(戚竞), En Li(李恩), Guo-Jian Qian(钱国健), Hui Chen(陈辉), Dong-Fei Wang(王东飞), Qi Zheng(郑琦), Qin Wang(汪琴), Xiao Lin(林晓), Yu-Yang Zhang(张余洋), Shixuan Du(杜世萱), Hofer W A, Hong-Jun Gao(高鸿钧) Epitaxial synthesis and electronic properties of monolayer Pd₂Se₃ 2020 Chin. Phys. B 29 098102

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Epitaxial synthesis and electronic properties of monolayer Pd₂Se₃