Abstract The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si:H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H2 doped samples, where the films change from nanocrystalline to amorphous.
Received: 13 February 2006
Revised: 15 September 2006
Accepted manuscript online:
Fund: Project
supported by the National Natural Science Foundation of China (Grant
No 10432050).
Cite this article:
Wang Jin-Liang(王金良) and Wu Er-Xing(毋二省) Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition 2007 Chinese Physics 16 848
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
