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Chinese Physics, 2007, Vol. 16(3): 725-729    DOI: 10.1088/1009-1963/16/3/027
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

Low-dimensional structures formed by irradiation of laser

Huang Wei-Qi(黄伟其)a)c)†, Liu Shi-Rong(刘世荣)b), Xu Li(许丽)a), Wu Ke-Yue(吴克跃)a), Qin Cao-Jian(秦朝建)b), and Cai Sao-Hong(蔡绍洪)a)
a Key Laboratory of Photoelectron Technology and Application, Guizhou University,Guiyang 550026, China; b Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; c Department of Physics, Guizhou Educational College, Guiyang 550003, China
Abstract  Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706nm and 725nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. A mechanism for increasing PL emission in the above structures is proposed, in which the trap states of the interface between SiO2 and nanocrystal play an important role.
Keywords:  low-dimensional nanostructures      photoluminescence      PL intensity      interface state  
Received:  20 September 2006      Revised:  02 October 2006      Accepted manuscript online: 
PACS:  61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))  
  61.43.Gt (Powders, porous materials)  
  61.46.-w (Structure of nanoscale materials)  
  78.55.Hx (Other solid inorganic materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No~10547006).

Cite this article: 

Huang Wei-Qi(黄伟其), Liu Shi-Rong(刘世荣), Xu Li(许丽), Wu Ke-Yue(吴克跃), Qin Cao-Jian(秦朝建), and Cai Sao-Hong(蔡绍洪) Low-dimensional structures formed by irradiation of laser 2007 Chinese Physics 16 725

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