Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

doi:10.1088/1009-1963/15/10/035

Abstract

Abstract In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

Keywords: emitter rapid thermal processing (RTP) PECVD solar cell

Received: 10 March 2006
Revised: 07 June 2006
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	72.40.+w	(Photoconduction and photovoltaic effects)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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Xu Ying(许颖), Diao Hong-Wei(刁宏伟), Hao Hui-Ying(郝会颖), Zeng Xiang-Bo(曾湘波), and Liao Xian-Bo(廖显伯) Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing 2006 Chinese Physics 15 2397

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Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

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