Abstract GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.
Received: 15 January 2003
Revised: 19 March 2003
Accepted manuscript online:
Fund: Project supported by the special Foundation for State Major Research Program of China (Grant No G20000683), the National Natural Science Foundation of China (Grant Nos 60276031, 60136020), and the National High Technology Development Program of China (Gra
Cite this article:
Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓) Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors 2003 Chinese Physics 12 785
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