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Chinese Physics, 2003, Vol. 12(1): 89-93    DOI: 10.1088/1009-1963/12/1/316
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

Wang Shou-Guo (王守国)ab, Zhang Yi-Men (张义门)a, Zhang Yu-Ming (张玉明)a
 Institute of Microelectronics, Xidian University, Xi'an 710071, China; b Department of Electronic Science, Northwest University, Xi'an 710069, China
Abstract  The effects of incomplete ionization of nitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole--Frenkel, and the effects of the potential on $N^+_{\rm d}$ (the concentration of ionized donors) and $n$ (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole--Frenkel effect and the potential have influence on the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the $C$-$V$ characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the $C$-$V$ characteristics are not significant.
Keywords:  silicon carbide      ion implantation      pinch-off voltage      $C$-$V$ characteristics   
Received:  19 April 2002      Revised:  24 September 2002      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
  72.20.Ht (High-field and nonlinear effects)  
Fund: Project supported by the National Defence Pre-Research Foundation of China (Grant No 8.1.7.3).

Cite this article: 

Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs 2003 Chinese Physics 12 89

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