Vanadium oxide thin films deposited on indium tin oxide glass by radio-frequency magnetron sputtering
Wang Xue-Jin (王学进)a, Fei Yun-Jie (费允杰)a, Xiong Yan-Yun (熊艳云)a, Nie Yu-Xin (聂玉昕)a, Feng Ke-An (冯克安)a, Li Lin-De (李林德)b
a Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Panzhihua Iron & Steel Research Institute, Panzhihua, Sichuan 617000, China
Abstract Highly oriented VO2(B), VO2(B) + V6O13 films were grown on indium tin oxide glass by radio-frequency magnetron sputtering. Single phase V6O13 films were obtained from VO2(B) +V6O13 films by annealing at 480℃ in vacuum. The vanadium oxide films were characterized by x-ray diffraction and x-ray photoelectron spectra (XPS). It was found that the formation of vanadium oxide films was affected by substrate temperature and annealing time, because high substrate temperature and annealing were favourable to further oxidation. Therefore, the formation of high valance vanadium oxide films was realized. The V6O13 crystalline sizes become smaller with the increase of annealing time. XPS analysis revealed that the energy position for all the samples was almost constant, but the broadening of the V2p3/2 line of the annealed sample was due to the smaller crystal size of V6O13.
Received: 10 January 2002
Revised: 24 February 2002
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50072045).
Cite this article:
Wang Xue-Jin (王学进), Fei Yun-Jie (费允杰), Xiong Yan-Yun (熊艳云), Nie Yu-Xin (聂玉昕), Feng Ke-An (冯克安), Li Lin-De (李林德) Vanadium oxide thin films deposited on indium tin oxide glass by radio-frequency magnetron sputtering 2002 Chinese Physics 11 737
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