Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (8): 088502    DOI: 10.1088/1674-1056/28/8/088502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
Chao-Yang Han(韩朝阳)1,2,3, Yuan Liu(刘远)2,3, Yu-Rong Liu(刘玉荣)1, Ya-Yi Chen(陈雅怡)1,2,3, Li Wang(王黎)1,2,3, Rong-Sheng Chen(陈荣盛)1
1 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 School of Automation, Guangdong University of Technology, Guangzhou 510006, China;
3 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China

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