Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (1): 018503    DOI: 10.1088/1674-1056/28/1/018503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
Lin-Yuan Wang(王林媛)1, Wei-Dong Song(宋伟东)1, Wen-Xiao Hu(胡文晓)1, Guang Li(李光)1, Xing-Jun Luo(罗幸君)1, Hu Wang(汪虎)1, Jia-Kai Xiao(肖稼凯)1, Jia-Qi Guo(郭佳琦)1, Xing-Fu Wang(王幸福)1, Rui Hao(郝锐)3, Han-Xiang Yi(易翰翔)3, Qi-Bao Wu(吴启保)2, Shu-Ti Li(李述体)1
1 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
2 School of Intelligent Manufacture and Equipment, Shenzhen Institute of Information Technology, Shenzhen 518172, China;
3 Guangdong Deli Semiconductor Co., Ltd, Jiangmen 529000, China

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