Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

doi:10.1088/1674-1056/26/3/038104

Abstract Carrier transport via the V-shaped pits (V-pits) in InGaN/GaN multiple-quantum-well (MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.

Keywords: V-shaped pits InGaN/GaN multiple-quantum-well solar cells carrier transport

Received: 19 September 2016
Revised: 23 November 2016
Accepted manuscript online:

PACS:	81.07.St	(Quantum wells)
	81.05.Ea	(III-V semiconductors)
	88.40.jm	(Thin film III-V and II-VI based solar cells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61564007 and 11364034) and the Sci-Tech Support Plan of Jiangxi Province, China (Grant No. 20141BBE50035).

Corresponding Authors: Li Wang
E-mail: wl@ncu.edu.cn

Cite this article:

Shitao Liu(刘诗涛), Zhijue Quan(全知觉), Li Wang(王立) Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells 2017 Chin. Phys. B 26 038104

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Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

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