Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

doi:10.1088/1674-1056/25/7/078103

Abstract Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 Ω·μm to sub 200 Ω·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.

Keywords: graphene field effect transistor contact resistance

Received: 11 December 2015
Revised: 15 March 2016
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	73.22.Pr	(Electronic structure of graphene)
	73.40.-c	(Electronic transport in interface structures)
	72.80.Vp	(Electronic transport in graphene)

Fund: Project by the National Science and Technology Major Project, China (Grant No. 2011ZX02707.3), the National Natural Science Foundation of China (Grant No. 61136005), the Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the Project of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515003).

Corresponding Authors: Zhi Jin
E-mail: jinzhi@ime.ac.cn

Cite this article:

Da-cheng Mao(毛达诚), Zhi Jin(金智), Shao-qing Wang(王少青), Da-yong Zhang(张大勇), Jing-yuan Shi(史敬元), Song-ang Peng(彭松昂), Xuan-yun Wang(王选芸) Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance 2016 Chin. Phys. B 25 078103

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Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

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