Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (6): 067305    DOI: 10.1088/1674-1056/24/6/067305
TOPICAL REVIEW --- III-nitride optoelectronic materials and devices Current Issue| Next Issue| Archive| Adv Search |
Progress in research of GaN-based LEDs fabricated on SiC substrate
Xu Hua-Yonga b, Chen Xiu-Fanga, Peng Yana, Xu Ming-Shenga c, Shen Yana c, Hu Xiao-Boa, Xu Xian-Ganga c
a State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
b School of Physics, Shandong University, Jinan 250100, China;
c Shandong Inspur Huaguang Optoelectronics Co., Ltd, Jinan 250100, China

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