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Chin. Phys. B, 2015, Vol. 24(6): 067306    DOI: 10.1088/1674-1056/24/6/067306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure

Tong Xiao-Lin (佟晓林)a b, Xia Xiao-Zhi (夏晓智)b, Li Qing-Xia (李青侠)a
a Department of Electronics and Information Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Electronics, Henan University, Kaifeng 475001, China
Abstract  The development of solution strategies for Zinc oxide (ZnO) quantum dots provides a pathway to utilizing ZnO nanocrystal thin films in optoelectronic devices. In this work, quasi-spherical ZnO quantum dots with a diameter of 5 nm are synthesized by using ethanol as a solvent. ZnO nanocrystal thin film is obtained by spin-coating ZnO quantum dots on a Au interdigital electrode (IDE)/Al2O3 substrate and annealing at different temperatures in order to yield the optimal photosensitive on/off ratio of ZnO. For further enhancing the responsivity, ion sputtering is utilized to deposit Pt nanoparticles on the surface of ZnO nanocrystal thin film, the responsivity of the ZnO/Pt bilayer nanostructure increases from 0.07 A/W to 54 A/W, showing that the metal/inorganic nanocrystal bilayer nanostructure can be used to improve the performance of optoelectronic devices. The excellent properties of ZnO/Pt bilayer nanostructure have important applications in future electronic and optoelectronic devices.
Keywords:  zinc oxide      nanocrystals      photoresponse      ion sputtering      plasma treatment  
Received:  26 August 2014      Revised:  26 January 2015      Accepted manuscript online: 
PACS:  73.63.Bd (Nanocrystalline materials)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  68.55.-a (Thin film structure and morphology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 41176156).
Corresponding Authors:  Li Qing-Xia     E-mail:  qingxia_li@hust.edu.cn
About author:  73.63.Bd; 85.30.De; 68.55.-a

Cite this article: 

Tong Xiao-Lin (佟晓林), Xia Xiao-Zhi (夏晓智), Li Qing-Xia (李青侠) Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure 2015 Chin. Phys. B 24 067306

[1] Kim H, Gilmore C, Horwitz J, Pique A, Murata H, Kushto G, Schlaf R, Kafafi Z and Chrisey D 2000 Appl. Phys. Lett. 76 259
[2] Ortel M, Pittner S and Wagner V 2013 J. Appl. Phys. 113 154502
[3] Liu Y R, Su J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
[4] Luther J M, Gao J, Lloyd M T, Semonin O E, Beard M C and Nozik A J 2010 Adv. Mater. 22 3704
[5] Bakin A, El Shaer A, Mofor A C, Al Suleiman M, Schlenker E and Waag A 2007 Phys. Status Solidi C 4 158
[6] Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C and Zhao Y 2014 Chin. Phys. B 23 046106
[7] Hongsith N, Wongrat E, Kerdcharoen T and Choopun S 2010 Sensor. Actuat. B-Chem. 144 67
[8] Oh E, Choi H Y, Jung S H, Cho S, Kim J C, Lee K H, Kang S W, Kim J, Yun J Y and Jeong S H 2009 Sensor. Actuat. B-Chem. 141 239
[9] Ren S T, Wang Q, Zhao F and Qu S L 2012 Chin. Phys. B 21 038104
[10] Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla D L and Wang Z L 2009 Appl. Phys. Lett. 94 191103
[11] Bie Y Q, Liao Z M, Zhang H Z, Li G R, Ye Y, Zhou Y B, Xu J, Qin Z X, Dai L and Yu D P 2011 Adv. Mater. 23 649
[12] Guo F, Yang B, Yuan Y, Xiao Z, Dong Q, Bi Y and Huang J 2012 Nat. Nanotechnol. 7 798
[13] Zhang D and Brodie D 1994 Thin Solid Films 251 151
[14] Sharma P, Sreenivas K and Rao K 2003 J. Appl. Phys. 93 3963
[15] Studenikin S, Golego N and Cocivera M 2000 J. Appl. Phys. 87 2413
[16] Zhang D 1995 J. Phys. D: Appl. Phys. 28 1273
[17] Gu Z and Ban S L 2014 Acta Phys. Sin. 63 107301 (in Chinese)
[18] Mao Y Z, Liu Y X, Li J, Li H, Pan X J and Xie E Q 2014 Acta Phys. Sin. 63 186801 (in Chinese)
[19] Hou Q Y, Lu Z Y and Zhao C W 2014 Acta Phys. Sin. 63 197102 (in Chinese)
[20] Tang X Y, Gao H, Pan S M, Sun J B, Yao X W and Zhang X T 2014 Acta Phys. Sin. 63 197302 (in Chinese)
[21] Moazzami K, Murphy T, Phillips J, Cheung M C and Cartwright A 2006 Semicond. Sci. Technol. 21 717
[22] Porter H, Cai A, Muth J and Narayan J 2005 Appl. Phys. Lett. 86 211918
[23] Zhao X W, Gao X Y, Chen X M, Chen C and Zhao M K 2013 Chin. Phys. B 22 024202
[24] Liu M and Kim H K 2004 Appl. Phys. Lett. 84 173
[25] Wang Y B, Li G P, Xu N N and Pan X D 2013 Chin. Phys. B 22 036102
[26] Zhao J, Dong J Y, Zhao X and Chen W 2014 Chin. Phys. Lett. 31 057307
[27] Xu X Y, Ma X Y, Jin L and Yang D R 2012 Chin. Phys. Lett. 29 037301
[28] Zhang Z, Yuan H, Zhou J, Liu D, Luo S, Miao Y, Gao Y, Wang J, Liu L and Song L 2006 J. Phys. Chem. B 110 8566
[29] Fan H B, Zheng X L, Wu S C, Liu Z G and Yao H B 2012 Chin. Phys. B 21 038101
[30] Yang P, Li P, Zhang L Q, Wang X L, Wang H, Song X F and Xie F W 2012 Chin. Phys. B 21 016803
[31] Mollow E 1954 Photoconductivity Conference (John Wiley & Sons)
[32] Yadav H K, Sreenivas K and Gupta V 2007 Appl. Phys. Lett. 90 172113
[33] Yadav H K, Sreenivas K and Gupta V 2010 J. Appl. Phys. 107 044507
[34] Wei T Y, Yeh P H, Lu S Y and Wang Z L 2009 J. Am. Chem. Soc. 131 17690
[35] Kane W M 1966 J. Appl. Phys. 37 2085
[36] Sherry L J, Jin R, Mirkin C A, Schatz G C and Duyne R P V 2006 Nano Lett. 6 2060
[37] Liu K W, Liu B, Wang S J, Wei Z P, Wu T, Cong C X, Shen Z X, Sun X W and Sun H D 2009 J. Appl. Phys. 106 083110
[38] Spanhel L and Anderson M A 1991 J. Am. Chem. Soc. 113 2826
[39] Zhou H, Alves H, Hofmann D, Kriegseis W, Meyer B, Kaczmarczyk G and Hoffmann A 2002 Appl. Phys. Lett. 80 210
[40] Kim K K, Kim H S, Hwang D K, Lim J H and Park S J 2003 Appl. Phys. Lett. 83 63
[41] Xu X, Xu C and Hu J 2014 J. Appl. Phys. 116 103105
[42] Liu T, Zhang X, Zhang J, Wang W, Feng L, Wu L, Li W, Zeng G and Li B 2013 Int. J. Photoenergy 2013 1
[43] Sze S M and Ng K K 2006 Physics of Semiconductor Devices (Hoboken: John Wiley & Sons)
[44] Prabhakar R R, Mathews N, Jinesh K B, Karthik K R G, Pramana S S, Varghese B, Sow C H and MhaiSalkar S 2012 J. Mater. Chem. 19 9678
[45] Chen M, Hu L, Xu J, Liao M, Wu L and Fang X 2011 Small 7 2449
[46] Liu H, Zhang Z, Hu L, Gao N, Sang L, Liao M, Ma R, Xu F and Fang X 2014 Adv. Opt. Mater. 2 771
[47] Li D Z and Zhu R 2013 Chin. Phys. B 22 018502
[48] Ren L, Tian T, Li Y, Huang J and Zhao X 2013 ACS Appl. Mater. Int. 5 5861
[49] Zhu Y B, Hu W, Na J, He F, Zhou Y L and Chen C 2011 Chin. Phys. B 20 047301
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