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CN 11-5639/O4
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Other articles related with "85.60.Jb":
47303 Jiao-Xin Guo, Jie Ding, Chun-Lan Mo, Chang-Da Zheng, Shuan Pan, Feng-Yi Jiang
  Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate
    Chin. Phys. B   2020 Vol.29 (4): 47303-047303 [Abstract] (10) [HTML 1 KB] [PDF 1344 KB] (2)
48504 Kang Su, Jing Li, Chang Ge, Xing-Dong Lu, Zhi-Cong Li, Guo-Hong Wang, Jin-Min Li
  Stackable luminescent device integrating blue light emitting diode with red organic light emitting diode
    Chin. Phys. B   2020 Vol.29 (4): 48504-048504 [Abstract] (6) [HTML 1 KB] [PDF 1027 KB] (1)
18503 Byung-Ryool Hyun, Mikita Marus, Huaying Zhong, Depeng Li, Haochen Liu, Yue Xie, Weon-kyu Koh, Bing Xu, Yanjun Liu, Xiao Wei Sun
  Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals
    Chin. Phys. B   2020 Vol.29 (1): 18503-018503 [Abstract] (43) [HTML 1 KB] [PDF 1218 KB] (44)
128504 Haochen Liu, Huaying Zhong, Fankai Zheng, Yue Xie, Depeng Li, Dan Wu, Ziming Zhou, Xiao-Wei Sun, Kai Wang
  Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes
    Chin. Phys. B   2019 Vol.28 (12): 128504-128504 [Abstract] (236) [HTML 1 KB] [PDF 6359 KB] (328)
107803 Chang-Fu Li, Kai-Ju Shi, Ming-Sheng Xu, Xian-Gang Xu, Zi-Wu Ji
  Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
    Chin. Phys. B   2019 Vol.28 (10): 107803-107803 [Abstract] (66) [HTML 1 KB] [PDF 1958 KB] (42)
78108 Haoran Zhang, Qi Zhang, Qian Zhang, Huizhi Sun, Gang Hai, Jing Tong, Haowen Xu, Ruidong Xia
  Polarized red, green, and blue light emitting diodes fabricated with identical device configuration using rubbed PEDOT:PSS as alignment layer
    Chin. Phys. B   2019 Vol.28 (7): 78108-078108 [Abstract] (140) [HTML 1 KB] [PDF 761 KB] (81)
58502 Guang Li, Lin-Yuan Wang, Wei-Dong Song, Jian Jiang, Xing-Jun Luo, Jia-Qi Guo, Long-Fei He, Kang Zhang, Qi-Bao Wu, Shu-Ti Li
  Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer
    Chin. Phys. B   2019 Vol.28 (5): 58502-058502 [Abstract] (163) [HTML 1 KB] [PDF 494 KB] (129)
38502 Yan-Li Wang, Pei-Xian Li, Sheng-Rui Xu, Xiao-Wei Zhou, Xin-Yu Zhang, Si-Yu Jiang, Ru-Xue Huang, Yang Liu, Ya-Li Zi, Jin-Xing Wu, Yue Hao
  Double superlattice structure for improving the performance of ultraviolet light-emitting diodes
    Chin. Phys. B   2019 Vol.28 (3): 38502-038502 [Abstract] (154) [HTML 1 KB] [PDF 818 KB] (72)
18503 Lin-Yuan Wang, Wei-Dong Song, Wen-Xiao Hu, Guang Li, Xing-Jun Luo, Hu Wang, Jia-Kai Xiao, Jia-Qi Guo, Xing-Fu Wang, Rui Hao, Han-Xiang Yi, Qi-Bao Wu, Shu-Ti Li
  Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
    Chin. Phys. B   2019 Vol.28 (1): 18503-018503 [Abstract] (119) [HTML 1 KB] [PDF 746 KB] (95)
107801 Zhi-Qi Kou, Yu Tang, Li-Ping Yang, Fei-Yu Yang, Wen-Jun Guo
  Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure
    Chin. Phys. B   2018 Vol.27 (10): 107801-107801 [Abstract] (144) [HTML 1 KB] [PDF 498 KB] (86)
98502 Xia Guo, Qiao-Li Liu, Hui-Jun Tian, Chun-Wei Guo, Chong Li, An-Qi Hu, Xiao-Ying He, Hua Wu
  Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires
    Chin. Phys. B   2018 Vol.27 (9): 98502-098502 [Abstract] (120) [HTML 1 KB] [PDF 1335 KB] (148)
88504 Li-Wen Cheng, Jian Ma, Chang-Rui Cao, Zuo-Zheng Xu, Tian Lan, Jin-Peng Yang, Hai-Tao Chen, Hong-Yan Yu, Shu-Dong Wu, Shun Yao, Xiang-Hua Zeng, Zai-Quan Xu
  Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers
    Chin. Phys. B   2018 Vol.27 (8): 88504-088504 [Abstract] (260) [HTML 1 KB] [PDF 799 KB] (151)
117001 Shu-ying Lei, Jian Zhong, Dian-li Zhou, Fang-yun Zhu, Chao-xu Deng
  Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye
    Chin. Phys. B   2017 Vol.26 (11): 117001-117001 [Abstract] (133) [HTML 1 KB] [PDF 601 KB] (124)
108504 Yong Huang, Zhi-You Guo, Hui-Qing Sun, Hong-Yong Huang
  Micro-light-emitting-diode array with dual functions of visible light communication and illumination
    Chin. Phys. B   2017 Vol.26 (10): 108504-108504 [Abstract] (122) [HTML 1 KB] [PDF 1324 KB] (232)
97801 Ge Zhu, Zhuo-Wei Li, Chuang Wang, Fa-Guang Zhou, Yan Wen, Shuang-Yu Xin
  Electronic structure and photoluminescence property of a novel white emission phosphor Na3MgZr(PO4)3:Dy3+ for warm white light emitting diodes
    Chin. Phys. B   2017 Vol.26 (9): 97801-097801 [Abstract] (163) [HTML 0 KB] [PDF 1596 KB] (172)
98507 Jian Gao, Qian-Qian Yu, Juan Zhang, Yang Liu, Ruo-Fei Jia, Jun Han, Xiao-Ming Wu, Yu-Lin Hua, Shou-Gen Yin
  Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene
    Chin. Phys. B   2017 Vol.26 (9): 98507-098507 [Abstract] (148) [HTML 1 KB] [PDF 1744 KB] (138)
87302 Yun-Ke Zhu, Jian Zhong, Shu-Ying Lei, Hui Chen, Shuang-Shuang Shao, Yu Lin
  High-efficiency organic light-emitting diodes based on ultrathin blue phosphorescent modification layer
    Chin. Phys. B   2017 Vol.26 (8): 87302-087302 [Abstract] (163) [HTML 1 KB] [PDF 849 KB] (134)
78503 Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman
  Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages
    Chin. Phys. B   2017 Vol.26 (7): 78503-078503 [Abstract] (168) [HTML 1 KB] [PDF 2570 KB] (172)
47302 Zijun Wang, Juan Zhao, Chang Zhou, Yige Qi, Junsheng Yu
  Enhancement of Förster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices
    Chin. Phys. B   2017 Vol.26 (4): 47302-047302 [Abstract] (223) [HTML 1 KB] [PDF 867 KB] (237)
47703 Ying-Jie Lu, Zhi-Feng Shi, Chong-Xin Shan, De-Zhen Shen
  ZnO-based deep-ultraviolet light-emitting devices
    Chin. Phys. B   2017 Vol.26 (4): 47703-047703 [Abstract] (210) [HTML 1 KB] [PDF 4943 KB] (453)
28502 Min Guo, Zhi-You Guo, Jing Huang, Yang Liu, Shun-Yu Yao
  Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
    Chin. Phys. B   2017 Vol.26 (2): 28502-028502 [Abstract] (209) [HTML 1 KB] [PDF 385 KB] (227)
17805 Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫)
  Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
    Chin. Phys. B   2017 Vol.26 (1): 17805-017805 [Abstract] (178) [HTML 1 KB] [PDF 308 KB] (255)
128502 Jin Cao, Jing-Wei Xie, Xiang Wei, Jie Zhou, Chao-Ping Chen, Zi-Xing Wang, Chulgyu Jhun
  Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot
    Chin. Phys. B   2016 Vol.25 (12): 128502-128502 [Abstract] (182) [HTML 1 KB] [PDF 697 KB] (313)
118506 Jia-Yong Lin, Yan-Li Pei, Yi Zhuo, Zi-Min Chen, Rui-Qin Hu, Guang-Shuo Cai, Gang Wang
  High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
    Chin. Phys. B   2016 Vol.25 (11): 118506-118506 [Abstract] (192) [HTML 0 KB] [PDF 866 KB] (241)
107803 Liang Qiao, Zi-Guang Ma, Hong Chen, Hai-Yan Wu, Xue-Fang Chen, Hao-Jun Yang, Bin Zhao, Miao He, Shu-Wen Zheng, Shu-Ti Li
  Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
    Chin. Phys. B   2016 Vol.25 (10): 107803-107803 [Abstract] (206) [HTML 1 KB] [PDF 931 KB] (234)
108505 Chang-Ting Wei, Jin-Yong Zhuang, Ya-Li Chen, Dong-Yu Zhang, Wen-Ming Su, Zheng Cui
  Surface treatment on polyethylenimine interlayer to improve inverted OLED performance
    Chin. Phys. B   2016 Vol.25 (10): 108505-108505 [Abstract] (239) [HTML 1 KB] [PDF 1102 KB] (459)
88505 Ping Qin, Wei-Dong Song, Wen-Xiao Hu, Yuan-Wen Zhang, Chong-Zhen Zhang, Ru-Peng Wang, Liang-Liang Zhao, Chao Xia, Song-Yang Yuan, Yi-an Yin, Shu-Ti Li, Shi-Chen Su
  Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
    Chin. Phys. B   2016 Vol.25 (8): 88505-088505 [Abstract] (262) [HTML 1 KB] [PDF 315 KB] (308)
78502 Yu Zhao, Bingfeng Fan, Yiting Chen, Yi Zhuo, Zhoujun Pang, Zhen Liu, Gang Wang
  Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
    Chin. Phys. B   2016 Vol.25 (7): 78502-078502 [Abstract] (174) [HTML 1 KB] [PDF 486 KB] (309)
58504 H Sattarian, S Shojaei, E Darabi
  Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene
    Chin. Phys. B   2016 Vol.25 (5): 58504-058504 [Abstract] (183) [HTML 1 KB] [PDF 2039 KB] (342)
28501 Cheng Zhang, Hui-Qing Sun, Xu-Na Li, Hao Sun, Xuan-Cong Fan, Zhu-Ding Zhang, Zhi-You Guo
  Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
    Chin. Phys. B   2016 Vol.25 (2): 28501-028501 [Abstract] (292) [HTML 1 KB] [PDF 488 KB] (514)
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