Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

doi:10.1088/1674-1056/23/11/118801

Abstract

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation (PⅢ) technique. The non-uniformity of emitter doping is lower than 5%. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-nm shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

Keywords: solar cells plasma immersion ion implantation conformal doping black silicon

Received: 05 March 2014
Revised: 29 May 2014
Accepted manuscript online:

PACS:	88.40.H-	(Solar cells (photovoltaics))
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)
	52.77.Dq	(Plasma-based ion implantation and deposition)
	73.63.-b	(Electronic transport in nanoscale materials and structures)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61106060 and 61274059) and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

Corresponding Authors: Liu Bang-Wu
E-mail: liubangwu@ime.ac.cn

Cite this article:

Shen Ze-Nan (沈泽南), Xia Yang (夏洋), Liu Bang-Wu (刘邦武), Liu Jin-Hu (刘金虎), Li Chao-Bo (李超波), Li Yong-Tao (李勇滔) Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation 2014 Chin. Phys. B 23 118801

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Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

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