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Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors |
| Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Chuan-Bo (李传波), Wang Qi-Ming (王启明) |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract We report efficient zero-bias high-speed top-illuminated p–i–n photodiodes (PDs) with high responsivity fabricated with germanium (Ge) films grown directly on silicon-on-insulator (SOI) substrates. For a 15 μm-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at –1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-μ-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.
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Received: 20 July 2013
Revised: 13 August 2013
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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95.55.Aq
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(Charge-coupled devices, image detectors, and IR detector arrays)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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42.79.Sz
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(Optical communication systems, multiplexers, and demultiplexers?)
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Corresponding Authors:
Xue Chun-Lai
E-mail: clxue@semi.ac.cn
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Cite this article:
Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Chuan-Bo (李传波), Wang Qi-Ming (王启明) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors 2014 Chin. Phys. B 23 038506
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