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Chin. Phys. B, 2014, Vol. 23(3): 038507    DOI: 10.1088/1674-1056/23/3/038507
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.
Keywords:  surface illuminate      line array      optical telecommunication      parallel optical interconnects  
Received:  05 June 2013      Revised:  13 August 2013      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Corresponding Authors:  Xue Chun-Lai     E-mail:  clxue@semi.ac.cn

Cite this article: 

Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 2014 Chin. Phys. B 23 038507

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