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Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects |
Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.
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Received: 05 June 2013
Revised: 13 August 2013
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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95.55.Aq
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(Charge-coupled devices, image detectors, and IR detector arrays)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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Corresponding Authors:
Xue Chun-Lai
E-mail: clxue@semi.ac.cn
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Cite this article:
Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 2014 Chin. Phys. B 23 038507
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