Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

doi:10.1088/1674-1056/22/8/087104

Abstract Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 10¹¹ cm^-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

Keywords: GaN terahertz Gunn diode point defect photoluminescence capacitance-voltage

Received: 23 November 2012
Revised: 29 December 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	72.10.Fk	(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079 and 61274092), the Doctoral Program Fund of the Ministry of Education of China (Grant No. 20090203110012), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant No. 60890191).

Corresponding Authors: Li Liang
E-mail: LL860726@163.com

Cite this article:

Li Liang (李亮), Yang Lin-An (杨林安), Zhou Xiao-Wei (周小伟), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode 2013 Chin. Phys. B 22 087104

[1]	Macpherson R F, Dunn G M and Pilgrim N J 2008 Semicond. Sci. Technol. 23 055005
[2]	Macpherson R F and Dunn G M 2008 Appl. Phys. Lett. 93 062103
[3]	Yang L A, He H B, Mao W and Hao Y 2011 Appl. Phys. Lett. 99 153501
[4]	Bayram C, Vashaei Z and Razeghi M 2010 Appl. Phys. Lett. 97 181109
[5]	Yilmazoglu O, Mutamba K, Pavlidis D and Karaduman T 2008 IEEE Trans. Electron. Dev. 55 6
[6]	Saarinen K, Laine T, Kuisma S, Nissila J, Hautojarvi P, Dobrzynski L, Baranowski J M, Pakula K, Stepniewski R, Wojdak M, Wysmolek A, Suzuki T, Leszczynski M, Grzegory I and Porowski S 1997 Phys. Rev. Lett. 79 3030
[7]	Xu F J, Shen B, Lu L, Miao Z L, Song J, Yang Z J, Zhang G Y, Hao X P, Wang B Y, Shen X Q and Okumura H 2010 J. Appl. Phys. 107 023528
[8]	Xu S R, Hao Y, Zhang J C, Cao Y R, Zhou X W, Yang L A, Ou X X, Chen K and Mao W 2010 J. Crystal Growth 312 3521
[9]	Xie S Y, Yin J Y, Zhang S, Liu B, Zhou W and Feng Z H 2009 Solid-State Electronics 53 1183
[10]	Lü L, Zhang J C, Xue J S, Ma X H, Zhang W, Bi Z W, Zhang Y and Hao Y 2012 Chin. Phys. B 21 037104
[11]	Wang X H, Pang L, Chen X J, Yuan T T, Luo W J, Zheng Y K, Wei K and Liu X Y 2011 Acta Phys. Sin. 60 097101 (in Chinese)
[12]	Chu R M, Zhou Y G, Chen K J and Lau K M 2003 Phys. Stat. Sol. (c) 7 2400
[13]	Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[14]	Yoshikawa M, Sugie R, Murakami M, Matsunobe T, Matsuda K and Ishida H 2006 Appl. Phys. Lett. 88 161905
[15]	You J H and Johnson H T 2007 Phys. Rev. B 76 115336
[16]	Elsner J, Jones R, Haugk M, Frauenheim Th, Heggie M I, Öberg S and Briddon P R 1998 Phys. Rev. B 76 115336
[17]	Du D C, Zhang J C, Ou X X, Wang H, Chen K, Xue J S, Xu S R and Hao Y 2011 Chin. Phys. B 20 037805
[18]	Ponce F A, Cherns D, Young W T and Steeds J W 1996 Appl. Phys. Lett. 69 770
[19]	Li L, Yang L A, Zhang J C, Zhang L X, Dang L S, Kuang Q W and Hao Y 2012 Solid-State Electronics 68 98
[20]	Cole M W, Ren F and Pearton S J 1997 Appl. Phys. Lett. 71 3004
[21]	Maeda N, Nozawa K, Hirayama Y and Kobayashi N 1998 J. Crystal Growth 190 359

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Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

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