Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes

doi:10.1088/1674-1056/21/3/037304

Abstract The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.

Keywords: 4H-SiC junction barrier Schottky diode temperature dependence electrical characteristics

Received: 24 May 2011
Revised: 17 October 2011
Accepted manuscript online:

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	73.40.-c	(Electronic transport in interface structures)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006060), the 13115 Innovation Engineering of Shaanxi, China (Grant No. 2008ZDKG-30), and the Key Laboratory Fund of Ministry of Education, China (Grant No. JY0100112501).

Corresponding Authors: Chen Feng-Ping,fpchen@yeah.net
E-mail: fpchen@yeah.net

Cite this article:

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes 2012 Chin. Phys. B 21 037304

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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes

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