Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

doi:10.1088/1674-1056/19/8/087201

Abstract Transport characteristics of single crystal bismuth films on Si(111)-7×7 are found to be metallic or insulating at temperatures below or above T_C, respectively. The transition temperature T_C decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T_C.

Keywords: bismuth film interface states Rashba spin-splitting semimetal-to-semiconductor transition

Received: 16 May 2010
Revised: 26 May 2010
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	68.55.-a	(Thin film structure and morphology)
	68.55.A-	(Nucleation and growth)
	73.50.Mx	(High-frequency effects; plasma effects)
	73.61.-r	(Electrical properties of specific thin films)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10874217 and 10427402) and the National Basic Research Program of China (973 Program) (Grant No. 2006CB933000).

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Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏) Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) 2010 Chin. Phys. B 19 087201

[1]	Hofmann Ph 2006 Prog. Surf. Sci. 81 191
[2]	Ogrin Yu F, Lutskii V N and Elinson M I 1966 JETP Lett. 3 71
[3]	Sandomirskii V B 1967 Sov. Phys. JETP 25 101
[4]	Hoffman C A, Meyer J R, Bartoli F J, Venere A Di, Yi X J, Hou C L, Wang H C, Ketterson J B and Wong G K 1993 Phys. Rev. B 48 11431
[5]	Chu H T 1995 Phys. Rev. B 51 5532
[6]	Hirahara T, Matsuda I, Yamazaki S, Miyata N, Nagao T and Hasegawa S 2007 Appl. Phys. Lett. 91 202106
[7]	Hirahara Toru, Matsuda Iwao, Yamazaki Shiro and Hasegawa Shuji 2009 Hyomen Kagaku 30 374
[8]	Wells J W, Handrup K, Kallehauge J F, Gammelgaard L, Balslev M B, Hansen J E, Petersen P R E , Boggild P and Hofmann Ph 2008 J. Appl. Phys. 104 053717
[9]	Koroteev Yu M, Bihlmayer G, Gayone J E, Chulkov E V, Blügel S, Echenique P M and Hofmann Ph 2004 Phys. Rev. Lett. 93 046403
[10]	Hirahara T, Nagao T, Matsuda I, Bihlmayer G, Chulkov E V, Koroteev Yu, Echenique P M, Saito M and Hasegawa S 2006 Phys. Rev. Lett. 97 146803
[11]	Hirahara T, Nagao T, Matsuda I, Bihlmayer G, Chulkov E V, Korotee Yu M and Hasegawa S 2007 Phys. Rev. B 75 035422
[12]	Rashba E I 1960 Sov. Phys. Solid State 2 1109
[13]	Nitta J, Akazaki T, Takayanagi H and Enoki T 1997 Phys. Rev. Lett. 78 1335
[14]	Hochstrasser M, Tobin J G, Rotenberg E and Kevan S D 2002 Phys. Rev. Lett. 89 216802
[15]	Rotenberg E, Chung J W and Kevan S D 1999 Phys. Rev. Lett. 82 4066
[16]	Reinert F, Nicolay G, Schmidt S, Ehm D and H"ufner S 2001 Phys. Rev. B 63 115415
[17]	Hoesch M, Muntwiler M, Petrov V N, Hengsberger M, Patthey L, Shi M, Falub M, Greber T and Osterwalder J 2004 Phys. Rev. B 69 241401(R)
[18]	Shikin A M, Varykhalov A, Prudnikova G V, Usachov D, Adamchuk V K, Yamada Y, Riley J D and Rader O 2008 Phys. Rev. Lett. 100 057601
[19]	Cercellier H, Didiot C, Fagot-Revurat Y, Kierren B, Moreau L and Malterre D 2006 Phys. Rev. B 73 195413
[20]	Varykhalov A, S'anchez-Barriga J, Shikin A M, Gudat W, Eberhardt W and Rader O 2008 Phys. Rev. Lett. 101 256601
[21]	Behnia K, Balicas L and Kopelevich Y 2009 Science 317 1729
[22]	Seradjeh B, Wu J S and Phillips P 2009 Phys. Rev. Lett. 103 136803
[23]	Cai W W, Pang F, Wang J, Liu H, Liang X J, Xue Q K and Chen D M 2007 Rev. Sci. Instrum. 78 065108
[24]	Nagao T, Sadowski J T, Saito M, Yaginuma S, Fujikawa Y, Kogure T, Ohno T, Hasegawa Y, Hasegawa S and Sakurai T 2004 Phys. Rev. Lett. 93 105501
[25]	Han T Z, Jia J F, Shen Q T, Dong G C and Xue Q K 2008 Surf. Sci. 602 102
[26]	Waldfried C, McIlroy D N, Zhang J D, Dowben P A, Katrich G A and Plummer E W 1996 Surf. Sci. 363 296
[27]	Lu M, Zieve R J, Hulst A van, Jaeger H M, Rosenbaum T F and Radelaar S 1996 Phys. Rev. B 53 1609
[28]	Yang F Y, Liu K, Hong K M, Reich D H, Searson P C and Chien C L 1999 Science 284 1335

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Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

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