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CN 11-5639/O4
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Other articles related with "73.61.-r":
97305 Rui Yang
  Review of resistive switching mechanisms for memristive neuromorphic devices
    Chin. Phys. B   2020 Vol.29 (9): 97305-097305 [Abstract] (50) [HTML 1 KB] [PDF 5417 KB] (89)
80702 Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass
  Structural and optical characteristic features of RF sputtered CdS/ZnO thin films
    Chin. Phys. B   2020 Vol.29 (8): 80702-080702 [Abstract] (27) [HTML 1 KB] [PDF 4840 KB] (54)
87303 Ying Zan, Yong-Liang Li, Xiao-Hong Cheng, Zhi-Qian Zhao, Hao-Yan Liu, Zhen-Hua Hu, An-Yan Du, Wen-Wu Wang
  High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
    Chin. Phys. B   2020 Vol.29 (8): 87303-087303 [Abstract] (36) [HTML 1 KB] [PDF 2270 KB] (27)
57307 Minhan Mi, Meng Zhang, Sheng Wu, Ling Yang, Bin Hou, Yuwei Zhou, Lixin Guo, Xiaohua Ma, Yue Hao
  High performance InAlN/GaN high electron mobility transistors for low voltage applications
    Chin. Phys. B   2020 Vol.29 (5): 57307-057307 [Abstract] (58) [HTML 1 KB] [PDF 1214 KB] (98)
58101 Tong Liu, Hong Zhang, Xin-Lu Cheng
  Insulator-metal transition in CaTiO3 quantum dots induced by ultrafast laser pulses
    Chin. Phys. B   2020 Vol.29 (5): 58101-058101 [Abstract] (40) [HTML 1 KB] [PDF 2581 KB] (49)
18105 Jian Ke Yao, Fan Ye, Ping Fan
  Optical and electrical properties of InGaZnON thin films
    Chin. Phys. B   2020 Vol.29 (1): 18105-018105 [Abstract] (89) [HTML 1 KB] [PDF 1410 KB] (91)
107304 Yang Cheng, Chen Huang, Hao Hong, Zixun Zhao, Kaihui Liu
  Emerging properties of two-dimensional twisted bilayer materials
    Chin. Phys. B   2019 Vol.28 (10): 107304-107304 [Abstract] (195) [HTML 1 KB] [PDF 4901 KB] (642)
97309 Sheng Zhang, Ke Wei, Yang Xiao, Xiao-Hua Ma, Yi-Chuan Zhang, Guo-Guo Liu, Tian-Min Lei, Ying-Kui Zheng, Sen Huang, Ning Wang, Muhammad Asif, Xin-Yu Liu
  Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
    Chin. Phys. B   2018 Vol.27 (9): 97309-097309 [Abstract] (318) [HTML 1 KB] [PDF 892 KB] (148)
106801 Nian-Qi Yao, Zhi-Chao Liu, Guang-Rui Gu, Bao-Jia Wu
  Structural, optical, and electrical properties of Cu-doped ZrO2 films prepared by magnetron co-sputtering
    Chin. Phys. B   2017 Vol.26 (10): 106801-106801 [Abstract] (168) [HTML 1 KB] [PDF 768 KB] (359)
97203 Mehdi Ahmadi, Sajjad Rashidi Dafeh, Samaneh Ghazanfarpour, Mohammad Khanzadeh
  Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer
    Chin. Phys. B   2017 Vol.26 (9): 97203-097203 [Abstract] (180) [HTML 0 KB] [PDF 2523 KB] (283)
57701 Hai-Sheng Hou, Guang-Ming Wang, Hai-Peng Li, Wen-Long Guo, Tang-jing Li, Tong Cai
  Single-layer broadband planar antenna using ultrathin high-efficiency focusing metasurfaces
    Chin. Phys. B   2017 Vol.26 (5): 57701-057701 [Abstract] (180) [HTML 1 KB] [PDF 4287 KB] (480)
58102 He Zhang, Shangsheng Li, Taichao Su, Meihua Hu, Hongan Ma, Xiaopeng Jia, Yong Li
  Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature
    Chin. Phys. B   2017 Vol.26 (5): 58102-058102 [Abstract] (172) [HTML 1 KB] [PDF 1171 KB] (287)
47702 Kun Tang, Shu-Lin Gu, Jian-Dong Ye, Shun-Ming Zhu, Rong Zhang, You-Dou Zheng
  Recent progress of the native defects and p-type doping of zinc oxide
    Chin. Phys. B   2017 Vol.26 (4): 47702-047702 [Abstract] (235) [HTML 1 KB] [PDF 17896 KB] (386)
117311 Binglan Wu, Juntao Song, Jiaojiao Zhou, Hua Jiang
  Disorder effects in topological states: Brief review of the recent developments
    Chin. Phys. B   2016 Vol.25 (11): 117311-117311 [Abstract] (345) [HTML 1 KB] [PDF 5811 KB] (406)
47201 Mehdi Ahmadi, Sajjad Rashidi Dafeh, Hamed Fatehy
  Inverted polymer solar cells with employing of electrochemical-anodizing synthesized TiO2 nanotubes
    Chin. Phys. B   2016 Vol.25 (4): 47201-047201 [Abstract] (222) [HTML 1 KB] [PDF 15638 KB] (295)
37310 Zhen-Hua Wu, Lei Chen, Qiang Tian
  Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates
    Chin. Phys. B   2016 Vol.25 (3): 37310-037310 [Abstract] (240) [HTML 1 KB] [PDF 314 KB] (320)
117203 Mehdi Ahmadi, Sajjad Rashidi Dafeh
  Photoactive area modification in bulk heterojunctionorganic solar cells using optimization of electrochemicallysynthesized ZnO nanorods
    Chin. Phys. B   2015 Vol.24 (11): 117203-117203 [Abstract] (317) [HTML 1 KB] [PDF 2022 KB] (643)
117404 Xing Ying, Wang Jian
  Direct evidence of high temperature superconductivity in one-unit-cell FeSe films on SrTiO3 substrate by transport and magnetization measurements
    Chin. Phys. B   2015 Vol.24 (11): 117404-117404 [Abstract] (701) [HTML 1 KB] [PDF 5772 KB] (877)
37303 Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong
  Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor
    Chin. Phys. B   2015 Vol.24 (3): 37303-037303 [Abstract] (215) [HTML 0 KB] [PDF 304 KB] (453)
127301 Zhao Jing, Dong Jing-Yu, Ren Shu-Xia, Zhang Li-Yong, Zhao Xu, Chen Wei
  First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory
    Chin. Phys. B   2014 Vol.23 (12): 127301-127301 [Abstract] (246) [HTML 1 KB] [PDF 666 KB] (379)
47303 Wang Xiu-Zhi, Gao Jin-Song, Xu Nian-Xi, Liu Hai
  A dual-band flexible frequency selective surface with miniaturized elements and maximally flat (Butterworth) response
    Chin. Phys. B   2014 Vol.23 (4): 47303-047303 [Abstract] (203) [HTML 1 KB] [PDF 1171 KB] (660)
47805 Cao Meng-Meng, Zhao Xiao-Ru, Duan Li-Bing, Liu Jin-Ru, Guan Meng-Meng, Guo Wen-Rui
  Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method
    Chin. Phys. B   2014 Vol.23 (4): 47805-047805 [Abstract] (218) [HTML 1 KB] [PDF 585 KB] (544)
127304 Guo Run-Da, Yue Shou-Zhen, Wang Peng, Chen Yu, Zhao Yi, Liu Shi-Yong
  Increased performance of an organic light-emitting diode by employing a zinc phthalocyanine based composite hole transport layer
    Chin. Phys. B   2013 Vol.22 (12): 127304-127304 [Abstract] (131) [HTML 1 KB] [PDF 464 KB] (494)
117308 Lan Lan, Gou Hong-Yan, Ding Shi-Jin, Zhang Wei
  Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application
    Chin. Phys. B   2013 Vol.22 (11): 117308-117308 [Abstract] (157) [HTML 1 KB] [PDF 443 KB] (373)
117309 Xu Gao-Bo, Xu Qiu-Xia, Yin Hua-Xiang, Zhou Hua-Jie, Yang Tao, Niu Jie-Bin, Yu Jia-Han, Li Jun-Feng, Zhao Chao
  A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process
    Chin. Phys. B   2013 Vol.22 (11): 117309-117309 [Abstract] (185) [HTML 1 KB] [PDF 517 KB] (562)
107301 Yan Guo-Ying, Bai Zi-Long, Li Hui-Ling, Fu Guang-Sheng, Liu Fu-Qiang, Yu Wei, Wang Jiang-Long, Wang Shu-Fang
  Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction
    Chin. Phys. B   2013 Vol.22 (10): 107301-107301 [Abstract] (159) [HTML 1 KB] [PDF 293 KB] (296)
27901 Wang Xiao-Hui, Gao Pin, Wang Hong-Gang, Li Biao, Chang Ben-Kang
  Influence of wet chemical cleaning on quantum efficiency of GaN photocathode
    Chin. Phys. B   2013 Vol.22 (2): 27901-027901 [Abstract] (390) [HTML 1 KB] [PDF 406 KB] (1165)
87901 Wang Xiao-Hui, Shi Feng, Guo Hui, Hu Cang-Lu, Cheng Hong-Chang, Chang Ben-Kang, Ren Ling, Du Yu-Jie, Zhang Jun-Ju
  The optimal thickness of transmission-mode GaN photocathode
    Chin. Phys. B   2012 Vol.21 (8): 87901-087901 [Abstract] (829) [HTML 1 KB] [PDF 459 KB] (810)
47304 Wang Jian-Bo,Lu Jun,Sun Guan-Cheng,Chen Xin-Yi,Chen Gui-Bo
  The effect of a non-aligned unit on double-screen frequency-selective surface transmission characteristics
    Chin. Phys. B   2012 Vol.21 (4): 47304-047304 [Abstract] (845) [HTML 1 KB] [PDF 398 KB] (469)
116803 Gao Hai-Xia, Hu Rong, Yang Yin-Tang
  Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states
    Chin. Phys. B   2011 Vol.20 (11): 116803-116803 [Abstract] (858) [HTML 0 KB] [PDF 172 KB] (1392)
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