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Chinese Physics, 2007, Vol. 16(2): 517-523    DOI: 10.1088/1009-1963/16/2/038
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

Wang Zhi-Gang (王志刚) and Zhang Ping (张平)
Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, China
Abstract  The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.
Keywords:  anomalous Hall effect      spin-orbit coupling      Rashba model  
Received:  28 June 2006      Revised:  14 August 2006      Accepted manuscript online: 
PACS:  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  73.63.Hs (Quantum wells)  
Fund: Project partially supported by the National Natural Science Foundation of China (Grant Nos 10544004 and 10604010).

Cite this article: 

Wang Zhi-Gang (王志刚) and Zhang Ping (张平) Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells 2007 Chinese Physics 16 517

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