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Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy |
| Zeyu Zhang(张泽宇)1, Qiang Zhang(张强)2, and Wenbo Mi(米文博)1,† |
1 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China;
2 Core Technology Platforms, New York University Abu Dhabi, P. O. Box 129188, Abu Dhabi, United Arab Emirates |
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Abstract Epitaxial Mn$_{4}$N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect (AHE) is investigated systematically. The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field. The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from 300 K to 150 K. The AHE scaling law in Mn$_{4}$N films is influenced by the temperature-dependent magnetization, carrier concentration and interfacial scattering. Different scaling laws are used to distinguish the various contributions of AHE mechanisms. The scaling exponent $\gamma > 2$ for the conventional scaling in Mn$_{4}$N films could be attributed to the residual resistivity $\rho_{xx0}$. The longitudinal conductivity $\sigma_{xx}$ falls into the dirty regime. The scaling of $\rho_{\rm AH}=\alpha \rho_{xx0} +b\rho_{xx}^{n}$ is used to separate out the temperature-independent $\rho_{xx0}$ from extrinsic contribution. Moreover, the relationship between $\rho_{\rm AH}$ and $\rho_{xx}$ is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE, which demonstrates that the dominant mechanism of AHE in the Mn$_{4}$N films can be ascribed to the competition between skew scattering, side jump and the intrinsic mechanisms.
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Received: 20 August 2021
Revised: 13 September 2021
Accepted manuscript online: 30 September 2021
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PACS:
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73.61.At
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(Metal and metallic alloys)
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75.47.Np
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(Metals and alloys)
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75.50.Gg
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(Ferrimagnetics)
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72.10.Di
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(Scattering by phonons, magnons, and other nonlocalized excitations)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 51871161 and 52071233). |
Corresponding Authors:
Wenbo Mi
E-mail: miwenbo@tju.edu.cn
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Cite this article:
Zeyu Zhang(张泽宇), Qiang Zhang(张强), and Wenbo Mi(米文博) Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy 2022 Chin. Phys. B 31 047305
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