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Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS |
| Wang Tao(汪涛)a), Guo Qing(郭清)a), Liu Yan(刘艳)b)†, and Yun Janggnc) |
a. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
b. Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 310007, China;
c. Department of Electronic Engineering, Chungnam National University, Gung-Dong, Daejeon, Korea |
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Abstract After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe substrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.
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Received: 30 September 2011
Revised: 07 December 2011
Accepted manuscript online:
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PACS:
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85.30.Kk
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(Junction diodes)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Hi
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(Surface barrier, boundary, and point contact devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the “Zijing Program Foundation” of Zhejiang University, and the Natural Science Foundation of Zhejiang Province for Oversea Returners. |
Corresponding Authors:
Liu Yan
E-mail: liuyan2010@zju.edu.cn
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Cite this article:
Wang Tao(汪涛), Guo Qing(郭清), Liu Yan(刘艳), and Yun Janggn Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS 2012 Chin. Phys. B 21 068502
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