Electrical resistivity of a novel oxadiazole derivative as a function of pressure and temperature using a diamond anvil cell
Luo Ji-Feng (骆继锋)a, Han Yong-Hao (韩永昊)a, Tang Ben-Chen (唐本臣)a, Gao Chun-Xiao (高春晓)a, Li Min (李敏)b, Zou Guang-Tian (邹广田)a
a Key Laboratory for Automobile Materials, Ministry of Education, Department of Materials Science, Jilin University, Changchun 130012, China; b State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
Abstract The in-situ electrical resistance measurement on the microcrystal of 1,4-bis[(4-methyloxyphenyl)-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene (OXD-2) has been carried out under conditions of high pressure and temperatures higher than room temperature by using the diamond anvil cell (DAC). Sample’s resistivity was calculated with a finite element analysis method. The temperature and pressure dependencies of the resistivity of OXD-2 microcrystal were measured up to 150 oC and 16 GPa. The resistivity of OXD-2 decreases with increasing temperature, indicating that OXD-2 exhibits organic-semiconductor conducting property in the region of experimental pressure. Between 90-100 ℃, the resistivity drops with the temperature, which reveals a temperature-induced phase transition. As the pressure increases, the resistivity of OXD-2 increases and reaches a maxium at about 6 GPa, and then begins to decrease at higher pressures. Combining the in-situ x-ray diffraction data with the resistivity measurement results under pressure, the anomaly resistivity drop after 6 GPa is confirmed to be from the pressure-induced amorphous phase transition of OXD-2.
Received: 18 November 2004
Revised: 07 January 2005
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10104008, 29974013, 50373016) and the International Science and Technology Cooperation Project of China (Grant No. 2001CB711201) and the Excellent Young Teachers Program of
Cite this article:
Luo Ji-Feng (骆继锋), Han Yong-Hao (韩永昊), Tang Ben-Chen (唐本臣), Gao Chun-Xiao (高春晓), Li Min (李敏), Zou Guang-Tian (邹广田) Electrical resistivity of a novel oxadiazole derivative as a function of pressure and temperature using a diamond anvil cell 2005 Chinese Physics 14 1223
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