Abstract The effects of incomplete ionization of nitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole--Frenkel, and the effects of the potential on $N^+_{\rm d}$ (the concentration of ionized donors) and $n$ (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole--Frenkel effect and the potential have influence on the pinch-off voltage $V_{\rm p}$ of 4H-SiC MESFETs. Although the $C$-$V$ characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the $C$-$V$ characteristics are not significant.
Received: 19 April 2002
Revised: 24 September 2002
Accepted manuscript online:
Fund: Project supported by the National Defence Pre-Research Foundation of China (Grant No 8.1.7.3).
Cite this article:
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs 2003 Chinese Physics 12 89
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