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Chin. Phys. B, 2020, Vol. 29(4): 047304    DOI: 10.1088/1674-1056/ab7809
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Qing Zhu(朱青)1,2, Xiao-Hua Ma(马晓华)2, Yi-Lin Chen(陈怡霖)1,2, Bin Hou(侯斌)2, Jie-Jie Zhu(祝杰杰)1,2, Meng Zhang(张濛)2, Mei Wu(武玫)2, Ling Yang(杨凌)1,2, Yue Hao(郝跃)2
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, China, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Abstract  We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms. The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other. The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface, and shifts positively due to zener trapping in AlGaN barrier layer. As the stress is removed, the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN. However, it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.
Keywords:  threshold voltage instability      interface state      zener trap      MIS-HEMT  
Received:  07 February 2020      Revised:  14 February 2020      Published:  05 April 2020
PACS:  73.61.Ey (III-V semiconductors)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
  73.20.-r (Electron states at surfaces and interfaces)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Science Challenge Project, China (Grant No. TZ2018004), and the National Natural Science Foundation of China (Grant Nos. 61534007 and 11690042).
Corresponding Authors:  Xiao-Hua Ma     E-mail:  xhma@xidian.edu.cn

Cite this article: 

Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃) Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs 2020 Chin. Phys. B 29 047304

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