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Chin. Phys. B, 2020, Vol. 29(10): 107201    DOI: 10.1088/1674-1056/abaed8

Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric

Tao-Tao Que(阙陶陶)1, Ya-Wen Zhao(赵亚文)1, Qiu-Ling Qiu(丘秋凌)1, Liu-An Li(李柳暗)1, Liang He(何亮)2, Jin-Wei Zhang(张津玮)1, Chen-Liang Feng(冯辰亮)1, Zhen-Xing Liu(刘振兴)1, Qian-Shu Wu(吴千树)1, Jia Chen(陈佳)1, Cheng-Lang Li(黎城朗)1, Qi Zhang(张琦)1, Yun-Liang Rao(饶运良)1, Zhi-Yuan He(贺致远)3, and Yang Liu (刘扬)1,
1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
3 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China

Stress voltages on time-dependent breakdown characteristics of GaN MIS-HEMTs during negative gate bias stress (with VGS < 0, VD = VS = 0) and off-state stress (VG < VTh, VDS > 0, VS = 0) are investigated. For negative bias stress, the breakdown time distribution (β) decreases with the increasing negative gate voltage, while β is larger for higher drain voltage at off-state stress. Two humps in the time-dependent gate leakage occurred under both breakdown conditions, which can be ascribed to the dielectric breakdown triggered earlier and followed by the GaN layer breakdown. Combining the electric distribution from simulation and long-term monitoring of electric parameter, the peak electric fields under the gate edges at source and drain sides are confirmed as the main formation locations for per-location paths during negative gate voltage stress and off-state stress, respectively.

Keywords:  gallium nitride      LPCVD-SiNx MIS-HEMT      time-dependent breakdown      negative gate bias      offstate stress  
Received:  03 July 2020      Revised:  10 August 2020      Accepted manuscript online:  13 August 2020
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  72.80.Sk (Insulators)  
  73.20.At (Surface states, band structure, electron density of states)  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
Corresponding Authors:  Corresponding author. E-mail:   
About author: 
†Corresponding author. E-mail:
* Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010128002 and 2020B010173001), the National Natural Science Foundation of China (Grant No. U1601210), the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011), the Open Project of Key Laboratory of Microelectronic Devices and Integrated Technology (Grant No. 202006), the Science and Technology Plan of Guangdong Province, China (Grant No. 2017B010112002), and the China Postdoctoral Science Foundation (Grant No. 2019M663233).

Cite this article: 

Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), and Yang Liu (刘扬)† Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric 2020 Chin. Phys. B 29 107201

Fig. 1.  

(a) Transfer and (b) off-state blocking voltage characteristics of the GaN MIS-HEMT.

Fig. 2.  

(a) Test diagrams of negative bias stress and (b) time-dependent breakdown with VGS = −295 V, −300 V, −305 V, respectively, and (c) lifetime extrapolation for 20 years based on 1/E model with failure rate of 63.2% and 0.01%.

Fig. 3.  

(a) Test diagrams of off-state stress and (b) time-dependent breakdown during off-state stress with VDS = 280 V and VDS = 270 V @VDG = 295 V.

Fig. 4.  

(a) The comparison of time-dependent breakdown between negative gate voltage stress and off-state stress. (b) Two sudden increasing trends of gate leakage occur during both stress conditions.

Fig. 5.  

Breakdown time distribution (β) of (a) negative gate bias with VGS = −295 V, −300 V, −305 V, respectively and (b) off-state stress with VDS = 280 V and VDS = 270 V @VDG = 295 V.

Fig. 6.  

Simulation of electric field distribution for rapid breakdown under (a) negative bias stress @VDG = 295 V and (b) off-state stress @VDG = 295 V. (c) Extraction of electric field distribution at the cutline of 10 nm below SiNx/AlGaN interface for both of the two stress conditions.

Fig. 7.  

The evolution of threshold voltage and on resistance during stress and recovery conditions of VGS = −200 V, VDS = 0 V, and VGS = −15 V, VDS = 185 V @VDG = 200 V.

Fig. 8.  

The evolution of leakage during (a) negative gate bias at VGS = −200 V, VDS = 0 V @VDG = 295 V and (b) off-state stress at VGS = −15 V, VDS = 185 V @VDG = 200 V.

Fig. 9.  

The schematic mechanism for the negative bias stress (a)–(c) and off-state time-dependent breakdown process (e)–(g).

Fig. 10.  

Transfer characteristics and IGS before stress and after adequate recovery of (a) negative bias stress at VGS = −200 V, VDS = 0 V @VDG = 200 V and (b) off-state stress at VGS = −15 V, VDS = 185 V @VDG = 200 V.

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