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Chin. Phys. B, 2017, Vol. 26(4): 048104    DOI: 10.1088/1674-1056/26/4/048104

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪)
Institute of Photovoltaic/School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
Abstract  Intrinsic hydrogenated amorphous silicon (a-Si:H) film is deposited on n-type crystalline silicon (c-Si) wafer by hot-wire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties. The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system, and a simple method of determining the interface state density (Dit) from lifetime measurement is proposed. The interface state density (Dit) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method. The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively. Lower values of interface state density (Dit) are obtained by using a-Si:H film with more uniform, compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.
Keywords:  amorphous silicon      microstructure      hydrogen bonding configurations      interface state density  
Received:  27 October 2016      Revised:  12 December 2016      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  88.40.jj (Silicon solar cells)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).
Corresponding Authors:  Lang Zhou     E-mail:

Cite this article: 

You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪) Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell 2017 Chin. Phys. B 26 048104

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