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Chin. Phys. B, 2019, Vol. 28(12): 128504    DOI: 10.1088/1674-1056/ab50fa
Special Issue: TOPICAL REVIEW — Quantum dot displays
TOPICAL REVIEW—Quantum dot displays Prev   Next  

Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes

Haochen Liu(刘皓宸)1, Huaying Zhong(钟华英)1, Fankai Zheng(郑凡凯)1, Yue Xie(谢阅)1, Depeng Li(李德鹏)1, Dan Wu(吴丹)2, Ziming Zhou(周子明)1, Xiao-Wei Sun(孙小卫)1, Kai Wang(王恺)1
1 Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
Abstract  This paper reviews the recent progress in the synthesis of near-infrared (NIR) lead chalcogenide (PbX; PbX={PbS}, PbSe, PbTe) quantum dots (QDs) and their applications in NIR QDs based light emitting diodes (NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance PbX based NIR-QLEDs.
Keywords:  lead chalcogenide      quantum dots      near-infrared      light emitting diodes  
Received:  22 August 2019      Revised:  09 October 2019      Published:  05 December 2019
PACS:  61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))  
  61.46.Hk (Nanocrystals)  
  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  85.60.Jb (Light-emitting devices)  
Fund: Project supported by the National Key Research and Development Program, China (Grant Nos. 2016YFB0401702 and 2017YFE0120400), the National Natural Science Foundation of China (Grant Nos. 61875082 and 61405089), the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, China (Grant No. 2017KSYS007), the Natural Science Foundation of Guangdong, China (Grant No. 2017B030306010), the Guangdong Province's 2018-2019 Key R&D Program: Environmentally Friendly Quantum Dots Luminescent Materials, China (Grant No. 2019B010924001), the Shenzhen Innovation Project, China (Grant Nos. JCYJ20160301113356947 and JSGG20170823160757004), the Shenzhen Peacock Team Project, China (Grant No. KQTD2016030111203005), the Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, China (Grant No. ZDSYS201707281632549), and the Tianjin New Materials Science and Technology Key Project, China (Grant No. 16ZXCLGX00040).
Corresponding Authors:  Kai Wang     E-mail:  wangk@sustech.edu.cn

Cite this article: 

Haochen Liu(刘皓宸), Huaying Zhong(钟华英), Fankai Zheng(郑凡凯), Yue Xie(谢阅), Depeng Li(李德鹏), Dan Wu(吴丹), Ziming Zhou(周子明), Xiao-Wei Sun(孙小卫), Kai Wang(王恺) Near-infrared lead chalcogenide quantum dots: Synthesis and applications in light emitting diodes 2019 Chin. Phys. B 28 128504

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