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Chin. Phys. B, 2019, Vol. 28(6): 064208    DOI: 10.1088/1674-1056/28/6/064208
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Xiao-Qian Du(杜小倩)1,2, Chong Li(李冲)3, Ben Li(黎奔)3, Nan Wang(王楠)1,2, Yue Zhao(赵越)1,2, Fan Yang(杨帆)1,2, Kai Yu(余凯)1,2, Lin Zhou(周琳)1,2, Xiu-Li Li(李秀丽)1,2,1,2, Bu-Wen Cheng(成步文)1,2, Chun-Lai Xue(薛春来)1,2
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  

Step-coupler waveguide-integrated Ge/Si avalanche photodetector (APD) is based on the vertical multimode interference (MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at -6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.

Keywords:  waveguides      photodetectors      waveguide devices  
Received:  24 January 2019      Revised:  14 March 2019      Accepted manuscript online: 
PACS:  42.82.Et (Waveguides, couplers, and arrays)  
  42.79.Gn (Optical waveguides and couplers)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
Fund: 

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402502 and 2017YFF0104803), the National Natural Science Foundation of China (Grant Nos. 61674140 and 61505003), the Beijing Natural Science Foundation, China (Grant No. 4162063), Beijing Education Commission Project (Grant No. SQKM201610005008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC022).

Corresponding Authors:  Chun-Lai Xue     E-mail:  clxue@semi.ac.cn

Cite this article: 

Xiao-Qian Du(杜小倩), Chong Li(李冲), Ben Li(黎奔), Nan Wang(王楠), Yue Zhao(赵越), Fan Yang(杨帆), Kai Yu(余凯), Lin Zhou(周琳), Xiu-Li Li(李秀丽), Bu-Wen Cheng(成步文), Chun-Lai Xue(薛春来) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers 2019 Chin. Phys. B 28 064208

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