Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

doi:10.1088/1674-1056/24/7/078105

Abstract Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiO_x:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2× 10¹² cm^-2 to 5.0× 10¹¹ cm^-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application.

Keywords: graded SiO_x buffer layer p/i interface solar cells

Received: 07 January 2015
Revised: 25 March 2015
Accepted manuscript online:

PACS:	81.07.Bc	(Nanocrystalline materials)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	88.40.H-	(Solar cells (photovoltaics))

Fund: Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

Corresponding Authors: Yu Wei, Li Xiao-Wei
E-mail: hbuyuwei@126.com;laser@hbu.edu.cn

Cite this article:

Shi Zhen-Liang (史振亮), Ji Yun (季云), Yu Wei (于威), Yang Yan-Bin (杨彦斌), Cong Ri-Dong (丛日东), Chen Ying-Juan (陈英娟), Li Xiao-Wei (李晓苇), Fu Guang-Sheng (傅广生) Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer 2015 Chin. Phys. B 24 078105

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Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

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