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Chin. Phys. B, 2015, Vol. 24(7): 078102    DOI: 10.1088/1674-1056/24/7/078102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

Huang Jiea, Li Mingb, Lau Kei-Mayc
a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
b Southwest China Research Institute of Electronic Equipment, Chengdu 610036, China;
c Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Abstract  A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition (MOCVD). A shift of the threshold voltage, from -0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed. E-mode transistors with 120 nm gate length own fT up to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.
Keywords:  metamorphic AlInAs/AlInAs HEMTs      metal-organic chemical vapor deposition      normally-off      CF4 plasma     
Received:  08 October 2014      Published:  05 July 2015
PACS:  81.05.Ea (III-V semiconductors)  
Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation, China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant No. XDJK2013B004 and 2362014XK13), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).
Corresponding Authors:  Huang Jie, Li Ming     E-mail:  jiehuang@swu.edu.cn;eeliming@sina.com

Cite this article: 

Huang Jie, Li Ming, Lau Kei-May Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD 2015 Chin. Phys. B 24 078102

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