Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

doi:10.1088/1674-1056/23/7/077201

Abstract We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8× 10¹⁵ cm^-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ · cm², while the normally-off device shows an on-state resistance of 3.85 mΩ ·cm². Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.

Keywords: silicon carbide trenched-and-implanted vertical junction field-effect transistor normally-on device normally-off device

Received: 09 November 2013
Revised: 21 January 2014
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Projects supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050401) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 51225701).

Corresponding Authors: Sheng Kuang
E-mail: shengk@zju.edu.cn

About author: 72.80.Ey; 85.30.Tv

Cite this article:

Chen Si-Zhe (陈思哲), Sheng Kuang (盛况) Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors 2014 Chin. Phys. B 23 077201

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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

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