Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

doi:10.1088/1674-1056/22/8/088401

Abstract The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Keywords: metal-organic chemical vapor deposition GaN-based solar cells InGaN/GaN multiple quantum wells

Received: 18 December 2012
Revised: 18 January 2013
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018).

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

Cite this article:

Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content 2013 Chin. Phys. B 22 088401

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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

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