Uniaxial strain-dependent magnetic and electronic properties of(Ga,Mn)As nanowires
Zhang Chen-Hui (张晨辉)a b, Xiang Gang (向钢)a b, Lan Mu (兰木)a b, Zhang Xi (张析)a b
a College of Physical Science and Technology, Sichuan University, Chengdu 610064, China; b Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
Abstract Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite (Ga,Mn)As nanowires (NWs) grown along the [0001] direction were investigated based on density functional theory (DFT). We found that (Ga,Mn)As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the NWs. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11004141 and 11174212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. 11-0351), and the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.
Corresponding Authors:
Xiang Gang, Zhang Xi
E-mail: gxiang@scu.edu.cn;xizhang@scu.edu.cn
Cite this article:
Zhang Chen-Hui (张晨辉), Xiang Gang (向钢), Lan Mu (兰木), Zhang Xi (张析) Uniaxial strain-dependent magnetic and electronic properties of(Ga,Mn)As nanowires 2014 Chin. Phys. B 23 096103
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