Vertical assembly of carbon nanotubes for via interconnects

doi:10.1088/1674-1056/21/8/088103

Abstract The via interconnects are key components in ultra-large scale integrated circuits (ULSI). This paper deals with a new method to create single-walled carbon nanotubes (SWNTs) via interconnects using alternating dielectrophoresis (DEP). Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition. The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%. We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.

Keywords: carbon nanotube via interconnects dielectrophoresis electrical properties contact resistance

Received: 05 April 2012
Revised: 16 April 2012
Accepted manuscript online:

PACS:	81.05.uj	(Diamond/nanocarbon composites)
	85.40.Ls	(Metallization, contacts, interconnects; device isolation)
	87.50.ch	(Electrophoresis/dielectrophoresis and other mechanical effects)
	73.63.-b	(Electronic transport in nanoscale materials and structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60625403, 60925015, and 61076069), the National Basic Research Program of China (Grant Nos. 2011CBA00600 and 2011CBA00601), and the Instrumental Analysis Fund of Peking University, China.

Corresponding Authors: Fu Yun-Yi
E-mail: yyfu@pku.edu.cn

Cite this article:

Wei Qin-Qin (魏芹芹), Wei Zi-Jun (魏子钧), Ren Li-Ming (任黎明), Zhao Hua-Bo (赵华波), Ye Tian-Yang (叶天扬), Shi Zu-Jin (施祖进), Fu Yun-Yi (傅云义), Zhang Xing (张兴), Huang Ru (黄如) Vertical assembly of carbon nanotubes for via interconnects 2012 Chin. Phys. B 21 088103

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Vertical assembly of carbon nanotubes for via interconnects

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