Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

doi:10.1088/1674-1056/21/2/027304

Abstract By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

Keywords: quantum confinement tunneling metal-oxide-semiconductor field-effect transistors linear combination of bulk band

Received: 08 September 2011
Revised: 10 November 2011
Accepted manuscript online:

PACS:	73.23.Ad	(Ballistic transport)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Basic Research Program of China (Grant No. G2009CB929300) and the National Natural Science Foundation of China (Grant Nos. 60821061 and 60776061).

Corresponding Authors: Jiang Xiang-Wei,xwjiang@semi.ac.cn
E-mail: xwjiang@semi.ac.cn

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Jiang Xiang-Wei(姜向伟) and Li Shu-Shen(李树深) Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs 2012 Chin. Phys. B 21 027304

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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

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