Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

doi:10.1088/1674-1056/20/5/057304

Abstract A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

Keywords: SiCGe/SiC transistor charge-compensation responsivity

Received: 18 May 2010
Revised: 08 January 2011
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	42.70.Nq	(Other nonlinear optical materials; photorefractive and semiconductor materials)
	61.43.Dq	(Amorphous semiconductors, metals, and alloys)

Fund: Project supported by National Natural Science Foundation of China (Grant No. 60876050), Special Scientific Research Project of Shaanxi Provincial Departments of Education, China (Grant No. 08JK367), and the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology, China.

Cite this article:

Pu Hong-Bin (蒲红斌), Cao Lin (曹琳), Chen Zhi-Ming (陈治明), Ren Jie (任杰) Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer 2011 Chin. Phys. B 20 057304

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Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

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