Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

doi:10.1088/1674-1056/20/3/037304

Abstract Three oxide heterojunctions made of LaAlO_3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current–voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO_3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p–n heterojunction.

Keywords: photoelectric heterojunction film

Received: 23 August 2010
Revised: 21 November 2010
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	75.30.Gr
	73.50.Pz	(Photoconduction and photovoltaic effects)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2010ZY50), and the Science and Technology Foundation for Young Teachers of China University of Geosciences (Beijing, China) (Grant No. 51900961132).

Cite this article:

Xing Jie(邢杰), Guo Er-Jia(郭尔佳), and Wen Juan(温娟) Photoelectric property of LaAlO_3-δ/Si heterojunctions with different oxygen contents 2011 Chin. Phys. B 20 037304

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Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

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Photoelectric property of LaAlO_3-δ/Si heterojunctions with different oxygen contents