Erratum to

doi:10.1088/1674-1056/20/2/027305

Keywords: Schottky barrier quantum mechanism effect effective mass electron density

Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Gk	(Tunneling)
	85.30.Tv	(Field effect devices)

Cite this article:

Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) vgluept Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" 2011 Chin. Phys. B 20 027305

[1]	Luan S Z and Liu H X 2008 Chin. Phys. B 17 3079
[2]	Reinaldo A V 2006 IEEE Trans. Electron Device 53 1596

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