Please wait a minute...
Chin. Phys. B, 2011, Vol. 20(11): 118401    DOI: 10.1088/1674-1056/20/11/118401
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

Huang Jian-Hua, Lü Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Chen Feng-Ping, Song Qing-Wen
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.
Keywords:  merged PiN/Schottky diode      junction termination technology      breakdown voltage      4H-SiC     
Received:  03 September 2010      Published:  15 November 2011
PACS:  84.30.Jc (Power electronics; power supply circuits)  
  85.30.Kk (Junction diodes)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the Shaanxi Provincial 13115 Innovation Engineering, China (Grant No. 2008ZDKG-30).

Cite this article: 

Huang Jian-Hua, Lü Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Chen Feng-Ping, Song Qing-Wen Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode 2011 Chin. Phys. B 20 118401

[1] Elasser A and Chow T P 2002 Proc. IEEE 90 969
[2] Miao Y B, Zhang Y M and Zhang Y M 2004 Microelectronics 34 116 (in Chinese)
[3] Baliga B J 1987 IEEE Electron Device Lett. 8 407
[4] Chen F P, Zhang Y M, Zhang Y M, Lü H L and Song Q W 2010 Chin. Phys. B 19 047305
[5] Chen F P, Zhang Y M, Lü H L, Zhang Y M and Huang J H 2010 Chin. Phys. B 19 097107
[6] Tarplee M C, Madangarli V P, Quinchun Z and Sudarshan T S 2001 IEEE Trans. Electron Devices 48 2659
[7] David C S, Niu G, Merrett J N, Cressler J D, Charles E and Tin C C 2000 Solid-State Electron. 44 1367
[8] David C S, Merrett J N, Cressler J D, Saddow S E, Williams J R, Ellis G and Niu G 2001 Mater. Sci. Forum 353-356 687
[9] David C S, Guofu N and John D C 2001 Solid-State Electron. 45 1659
[10] Zheng Q L, Zhang Y M and Zhang Y M 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, November 25-27, 2009 Xian, China, pp. 334-337
[11] Song Q W, Zhang Y M, Zhang Y M and Wang Z X 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, November 25-27, 2009 Xian, China, pp. 291-294
[12] Pérez R, Tournier D, Pérez-Tomás A, Godignon P, Mestres N and Millán J 2005 IEEE Trans. Electron Devices 52 2309
[13] Kinoshita K, Hatakeyama T, Takikawa O, Yahata A and Shinohe T 2002 Proc. ISPSD'02 pp. 253
[14] DESSIS-ISE, 2D Semiconductor Device Simulator version 10.0 2005 Integrated Systems Engineering, Zurich
[15] Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y and Wang Z X 2010 Chin. Phys. B 19 047201
[1] Simulation study of high voltage GaN MISFETs with embedded PN junction
Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩). Chin. Phys. B, 2020, 29(8): 080701.
[2] Variable-K double trenches SOI LDMOS with high-concentration P-pillar
Lijuan Wu(吴丽娟), Lin Zhu(朱琳), Xing Chen(陈星). Chin. Phys. B, 2020, 29(5): 057701.
[3] Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
Jia-Fei Yao(姚佳飞), Yu-Feng Guo(郭宇锋), Zhen-Yu Zhang(张振宇), Ke-Meng Yang(杨可萌), Mao-Lin Zhang(张茂林), Tian Xia(夏天). Chin. Phys. B, 2020, 29(3): 038503.
[4] Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2020, 29(2): 027301.
[5] A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications
Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋). Chin. Phys. B, 2020, 29(12): 127701.
[6] Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(9): 098503.
[7] Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南). Chin. Phys. B, 2019, 28(5): 058503.
[8] Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园). Chin. Phys. B, 2019, 28(3): 037201.
[9] 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(2): 027301.
[10] Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽). Chin. Phys. B, 2019, 28(2): 027303.
[11] Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time
Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦). Chin. Phys. B, 2019, 28(12): 127201.
[12] Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门). Chin. Phys. B, 2019, 28(11): 117303.
[13] Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻). Chin. Phys. B, 2019, 28(10): 106101.
[14] Simulation of SiC radiation detector degradation
Hai-Li Huang(黄海栗), Xiao-Yan Tang(汤晓燕), Hui Guo(郭辉), Yi-Men Zhang(张义门), Yu-Tian Wang(王雨田), Yu-Ming Zhang(张玉明). Chin. Phys. B, 2019, 28(1): 010701.
[15] Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants
Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏). Chin. Phys. B, 2019, 28(1): 017101.
No Suggested Reading articles found!