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Chin. Phys. B, 2010, Vol. 19(9): 097305    DOI: 10.1088/1674-1056/19/9/097305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

Li Chun-Wei, Zhu Yan-Xu, Shen Guang-Di, Zhang Yong-Hui, Qin Yuan, Gao Wei, Jiang Wen-Jing, Zhou De-Shu
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China
Abstract  In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 Ω · cm2 and 1.743×10-3 Ω ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.
Keywords:  Ohmic contact      tunneling      light emitting diode      Zn/Au-ITO/Zn  
Received:  08 December 2009      Revised:  18 March 2010      Published:  15 September 2010
PACS:  7340C  
  7340G  
  7360L  
  7865K  
Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092007), the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (Grant No. X0002013200801) and the Seventh BJUT Technology Fund for postgraduate students, China.

Cite this article: 

Li Chun-Wei, Zhu Yan-Xu, Shen Guang-Di, Zhang Yong-Hui, Qin Yuan, Gao Wei, Jiang Wen-Jing, Zhou De-Shu Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes 2010 Chin. Phys. B 19 097305

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