Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

doi:10.1088/1674-1056/19/9/097305

Abstract In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10^-6 Ω · cm² and 1.743×10^-3 Ω ·cm² between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.

Keywords: Ohmic contact tunneling light emitting diode Zn/Au-ITO/Zn

Received: 08 December 2009
Revised: 18 March 2010
Accepted manuscript online:

PACS:	7340C
	7340G
	7360L
	7865K

Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092007), the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (Grant No. X0002013200801) and the Seventh BJUT Technology Fund for postgraduate students, China.

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Li Chun-Wei(李春伟), Zhu Yan-Xu(朱彦旭), Shen Guang-Di(沈光地), Zhang Yong-Hui(张勇辉), Qin Yuan(秦园), Gao Wei(高伟), Jiang Wen-Jing(蒋文静), and Zhou De-Shu(邹德恕) Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes 2010 Chin. Phys. B 19 097305

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Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

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