Far-field superlens for nanolithography

doi:10.1088/1674-1056/19/3/034202

Abstract A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50~nm line width is achievable with the structure shown in this paper by using 365~nm wavelength light, and the light can be transferred to a far distance in the photoresist.

Keywords: far-field lithography superlens resolution

Received: 22 June 2009
Revised: 30 July 2009
Accepted manuscript online:

PACS:	42.79.Bh	(Lenses, prisms and mirrors)
	42.82.Bq	(Design and performance testing of integrated-optical systems)
	42.82.Cr	(Fabrication techniques; lithography, pattern transfer)
	85.85.+j	(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)

Fund: Project supported by the Shanghai Committee of Science and Technology of China (Grant No.~0852nm06600) and the National Natural Science Foundation of China(Grant No.~60808014).

Cite this article:

Chen Jian(陈健), Wang Qing-Kang(王庆康), and Li Hai-Hua(李海华) Far-field superlens for nanolithography 2010 Chin. Phys. B 19 034202

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