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Chin. Phys. B, 2010, Vol. 19(1): 017204    DOI: 10.1088/1674-1056/19/1/017204
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ohmic contacts of 4H-SiC on ion-implantation layers

Zhang Yana, Wang Shou-Guob, Zhang Yi-Menc, Zhang Yu-Mingc
a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; b Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China; c School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance Rsh are 30~kΩ /□ and 4.9~kΩ/□ and the values of specific contact resistance ρc of ohmic contacts are 7.1× 10-4Ω.cm2 and 9.5× 10-5Ω.cm2 for the implanted layers with implantation performed three and four times respectively.
Keywords:  sheet resistance      ion implantation      ohmic contact      silicon carbide  
Received:  03 April 2009      Revised:  18 May 2009      Published:  15 January 2010
PACS:  73.40.Ns (Metal-nonmetal contacts)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  73.40.Cg (Contact resistance, contact potential)  
  73.61.Le (Other inorganic semiconductors)  

Cite this article: 

Wang Shou-Guo, Zhang Yan, Zhang Yi-Men, Zhang Yu-Ming Ohmic contacts of 4H-SiC on ion-implantation layers 2010 Chin. Phys. B 19 017204

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